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SB3060LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE FEATURES
* Low forward voltage drop, low power losses * High efficiency operation * In compliance with EU RoHS 2002/95/EC directives
60 Volts
CURRENT
30 Ampers
MECHANICAL DATA
Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ=25oC,L=60mH per diode Typ i c a l The r ma l Re s i s ta nc e Operating junction and storage temperature range per diode per device per diode per diode SYMBOL VRRM I F(AV) I FSM EAS RJC TJ,TSTG VALUE 60 30 15 250 450 2 .5 -55 to + 150
O
UNIT V A A mJ C /W
o
C
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS I R=1mA I F=15A I F=30A I F=15A I F=30A VR=60V TA=25oC TA=125oC TA=25oC TA=125oC MIN. 60 TYP. 0.48 0.64 MAX. 0.60 0.75 0.56 0.70 480 150 UNIT V V V A mA
Instantaneous forward voltage per diode (1)
VF
Reverse current per diode (1) Note.1 Pulse test : tp=380s, <2%
IR
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.1.2-AUG.6.2009 PAGE . 1
SB3060LCT
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted)
Average Forward Current (A)
35
Junction Capacitance (pF)
Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 50 75 100
o
10000 T J =25 oC f=1.0MHz Vsig=50mVp-p 1000
100
125
150
10 0.1
1
10
100
Case Temperature ( C)
Reverse Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Junction Capacitance
1000
1000
Instantaneous Forward Current (A)
Instantaneous Reverse Current (mA)
T A =100 C
100
o
100 T A =100 C 10 1 0.1 0.01 10 20 T A =25 oC
o
T A =125 C
o
10
T A =75 oC
1
T A =25 oC
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
REV.1.2-AUG.6.2009
PAGE . 2

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